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Sunbin Deng (邓孙斌，鄧孫斌)

Biography: I am presently a Postdoctoral Fellow under the supervision of Prof. Suman Datta at School of Electrical and Computer Engineering, Georgia Institute of Technology (GaTech). My current research is mainly on back-end-of-line (BEOL) compatible oxide transistors for enabling advanced computing (e.g., in-memory computing) hardware and monolithically 3D integrated functional backside (e.g., power delivery network) at leading-edge logic nodes. I received my Ph.D. degree in Electronic and Computer Engineering from the Hong Kong University of Science and Technology (HKUST) under the supervision of Prof. Hoi-Sing Kwok in 2020. Afterwards, I have served as a postdoctoral research associate for 1.5 years, continuing my Ph.D. research on metal oxide thin-film electronics at State Key Laboratory of Advanced Displays and Optoelectronics Technologies (SKL of ADT), HKUST. Also, I worked with Prof. Ching Wan Tang and Prof. Shou-Cheng Dong to develop advanced silicon nitride shadow masks (SiNMs) for direct patterning of ultra-high-resolution RGB side-by-side OLED micro-displays. From Sept. 2021 to Aug. 2022, I was a postdoctoral researcher in cooperation with Prof. Shriram Ramanathan at Purdue University, West Lafayette., where I focused on strongly correlated oxide electronic/ionic devices and circuits for neuromorphic computing hardware. Before my Ph.D. study, I obtained my B.S. degree in Optical Information Science and Technology from Huazhong University of Science and Technology (HUST), Wuhan (advisor: Prof. Jun Zhou). I have co-authored >40 peer-reviewed papers, >30 conference proceeding articles, 1 book chapter, and 6 US/China patents. I was a recipient of Distinguished Paper Award at International Display Manufacturing Conference (IDMC) in 2015 and 2017, Best Presentation Award in Postgraduate Workshop on Display Research in 2016 and 2018. I also received the Distinguished Paper Award and was interviewed by the Young Engineers Spotlight (YES) at SID Display Week 2021. I was selected as an invited speaker of the 2021 Young Leader Conference at International Conference on Display Technology (ICDT), and is now a member of display future star committee of SID China.

Office: 4140 Marcus Nanotechnology Building, 345 Ferst Dr NW, Atlanta, GA 30332, USA
Email: sdeng76@gatech.edu
Tel: 1 (765) 746-9154

[Google Scholar]  /  [ResearchGate]  /  [Curriculum Vitae]

News

  • [04/2024] Three papers have been accepted by 2024 IEEE Symposium on VLSI Technology & Circuits.

  • [04/2024] One co-authored paper has been accepted by DRC 2024.

  • [01/2024] A joint paper entitled "Subnanometer Scale Mapping of Hydrogen Doping in Vanadium Dioxide" has been accepted by Nano Letters. [Paper]

  • [01/2024] I joined the editorial board Rare Metals. Paper Submissions are welcome!

  • [09/2023] Two papers on on-chip power delivery and oxide transistor reliability have been accepted by IEEE International Electron Devices Meeting (IEDM) 2023.

  • [09/2023] I won the Best Theme Poster Award at the 1st Annual Review of the Center for Heterogeneous Integration of Micro Electronic Systems (CHIMES).

  • [08/2023] A paper entitled "Hydrogenated VO2 Bits for Probabilistic Computing" has been accepted by IEEE Eletron Device Letters. [Paper]

  • [03/2023] I will give an invited talk entitled "Fluorinated Metal Oxide Thin-Film Transistors with Low Process Thermal Budgets" at ICDT 2023.

  • [02/2023] A paper entitled "Selective area doping for Mott neuromorphic electronics" has been accepted by Science Advances. [Paper]

  • [11/2022] A recent work entitled "VO2 Insulator-Metal Phase Change Based Neuromorphic Materials and Devices" was presented at 2022 MRS Fall Meeting & Exhibition.

  • [09/2022] I joined Prof. Suman Datta's group as a Postdoctoral Fellow.

  • [06/2022] An invited review entitled "Complex oxides for brain-inspired computing: A review" has been accepted by Advanced Materials (IF=30.849).[Paper]

  • [03/2022] A paper entitled "A Differential Ring Oscillator With Tail Current Source Control Scheme Using N-Type Oxide TFTs" has been accepted by IEEE Transactions on Electron Devices. [Paper]

  • [03/2022] My recent work on hydrogenated vanadium oxide switches for neuromorphic computing will be presented at 23rd International Conference on Solid State Ionics (SSI-23).

  • [12/2021] A paper on oxide TFT frontend amplifiers for flexible sensing systems has been accepted by IEEE Transactions on Electron Devices. Mr. Yuming Xu presented this work at the Postgraduate Workshop on Display Research this year and won the Best Paper Award. Congratulations![Paper] [Award]

  • [09/2021] I joined Prof. Shriram Ramanathan's group as a Postdoctoral Research Fellow.

  • [08/2021] A paper on transparent arithemetic and logic circuits using the ITO-stabilized ZnO TFT technology has been accepted by IEEE Transactions on Circuits and Systems I: Regular Papers. [Paper]

  • [07/2021] An US patent on a method for manufacturing top-gate self-aligned ITZO TFTs has been granted. [Patent]

  • [06/2021] I gave an invited talk at the Young Leader Conference of ICDT 2021. [Slides]

  • [05/2021] I was interviewed by the Young Engineers Spotlight (YES) at SID Display Week 2021. [Video]

  • [05/2021] The full-length version of my distinguished paper of SID Display Week 2021 has appeared in JSID with a cover image. [Paper] [Additional cover]

  • [05/2021] I received the Distinguished Paper Award of SID Display Week 2021, for paper "A Cost-Effective Fluorination Method for Enhancing the Performance of Metal Oxide Thin-Film Transistors Using a Fluorinated Planarization Layer". [Paper] [Slides]

  • [04/2021] A paper entitled "All-Oxide Thin-Film Transistors for Low-Voltage-Operation Circuits" has been accepted by ICDT 2021.

  • [03/2021] I am deeply saddened by the passing of Prof. Jun Zhou, one of my beloved mentors in science and in life. My most sincere condolences.

  • [12/2020] A book chapter has been published by IOP Publishing Ltd. [Book].

  • [12/2020] A paper on process thermal budget reduction in the fabricaton of metal oxide TFTs has been accepted by IEEE Eletron Device Letters. [Paper]

  • [04/2020] I continued my reserach at SKL of ADT as a postdoctoral research associate in cooperation with Prof. Hoi-Sing Kwok and Prof. Ching Wan Tang.

  • [01/2020] I passed my Ph.D. thesis defense. Thesis committee: Prof. Hoi-Sing Kwok (supervisor), Prof. Man Wong (co-supervisor), Prof. Kam Sing Wong (chairperson), Prof. Kwang-Ting Tim Cheng, Prof. Zhiyong Fan, Prof. Jiannong Wang, and Prof. Jin Jang (external member).

    • Education

  • Georgia Institute of Technology (GaTech), Atlanta, USA

  • Purdue University, West Lafayette, USA

  • The Hong Kong University of Science and Technology (HKUST), Clear Water Bay, Hong Kong SAR

  • Huazhong University of Science and Technology (HUST), Wuhan, China

    • Research

  • Hybrid-Phase Metal Oxide (hp-MO) Thin-Film Transistors (TFTs) for Information Displays and Sensor Interfaces

    • Metal oxide semiconductors are expected to be one of the most promising TFT channel materials. However, with the development of information displays and Internet of Things (IoT) technology, technical standards of MO TFTs become increasingly higher. The prevalent amorphous indium-gallium-zinc oxide (a-IGZO) devices always suffer from technical issues such as mobility inadequacy and device instability. Our efforts are being made on the continuing improvement of electrical characteristics and reliability of MO TFTs. Taking advantage of a collaborative modification on element composition and crystal morphology, we have developed hybrid-phase metal oxide (hp-MO) thin films, the electron Hall mobility of which (>30 cm2/Vs) could surpass the amorphous counterpart's theoretical upper limit, as more competitive MO TFT channels but without increasing material costs. Through processing innovations (e.g., gate insulator engineering, gate electrode engineering, and planarization-enable fluorination), a series of hp-MO TFTs including etch-stopper, self-aligned, and vertical devices can be fabricated with high electrical performance and robust device stability. These devices can further serve as cost-effective energy-efficient building blocks, participating in the demonstration of a wide range of electrical applications such as transparent electronics, micro-displays, augmented reality, and sensor interfaces.

  • Back-End-of-Line (BEOL) Compatible Oxide Transistor Technology for Monolithic Three-Dimensional (M3D) Integration and Functional Backside-Based CMOS Scaling

    • Device interconnect separation to frontside signal lines and backside power delivery can bring about improvements of IR drop and CMOS area scaling. As the industry is transitioning into the backside power delivery solutions for leading edge node, there is a demand to develop strategies to extend such vertical power delivery networks across multiple tiers of the M3D stacked circuits and systems. The 48 V to 12 V conversion might occur on the package or interposer level, while the 12 V to 3 V or 1 V conversion might occur within the M3D stack to allow maximum efficiency. It is also recognized the different voltage domains may exist in a M3D stack, for instance, 0.8 V for FEOL silicon logic circuitry, 1.6 V for supporting embedded DRAM on the MEOL tier, and 3.2 V for programming non-volatile memories (e.g., FeFET or RRAM) on the BEOL tier. Hence, voltage converters and regulators are needed across the M3D stack. One challenge to integrate power transistors at the BEOL is the thermal budget (<400 ℃), which prevents the compelling technologies such as GaN to be deployed in the 3D sequential integration schemes. To overcome the challenge, we have developed a tungsten-doped indium oxide (IWO) power transistor technology, which is compatible with the BEOL integration. Moreover, considering a lack of high-performance p-type oxide semiconductors and undesired threshold voltage drop in enhancement-mode devices, we have further developed a monolithic co-integration technology, where both enhancement- and depletion-mode power transistors could be integrated on the same chip to enable efficient voltage conversion of on-chip switched-capacitor DC-DC converters. In addition to power delivery, we are also making efforts to migrate more system functions (e.g., global signal routing) to the CMOS backside.

  • Strongly Correlated Oxide Electronics for non-von Neumann Computing

    • In the search for the next generation AI hardware, explorations into technologies beyond CMOS have led to the development of materials and novel device structures that are tailored specifically for neuromorphic circuits and applications—breaking the memory bottleneck. Various physical phenomena have been exploited, such as ion migration, electron migration, phase change, ferroelectricity, magnetic tunneling, insulator-to-metal transitions (IMTs). The key idea behind all of these is to utilize intrinsic physics to enable efficient computation with substantial performance-power-area-cost (PPAC) advantages by replicating the functionalities of biological neurons and synapses. Strongly correlated oxide materials are particularly suited for these studies owing to their vastly tunable physical properties over multiple timescales by subtle external stimulus, and can emulate various neuronal and synaptic functionalities found in biological brains. However, different neural functions usually relies on different material systems. We hypothesize that the ability to perform multiple neural functions with the same material system can simplify the chip-scale fabrication process among other benefits. Especially when new materials that have never been introduced in a fab are being considered, if they can offer more than one compelling device application within the same technology domain, then the chances of their consideration naturally become greater. Therefore, we borrowed the concept of selective doping from integrated circuit industry and applied selective hydrogen doping to quantum materials (e.g., VO2). By locally configuring pairs of catalytic and inert electrodes that enable nanoscale control over carrier density, volatility or nonvolatility could be appropriately assigned to each two-terminal Mott memory device per lithographic design, and both neuron- and synapse-like devices were successfully integrated on a single chip. Our recent work further demonstrated partially hydrogenated VO2 as potential p-bit generators based on the stochastic IMT relaxation dynamics. The phase transition threshold characteristics and p-bit values of the post-fabricated devices were controllable by gentle forming gas annealing, offering an interesting direction to further explore hardware for probabilistic computing.

  • Silicon Nitride Shadow Mask (SiNM) Technology for Direct Patterning of OLED Microdisplays

    • An ideal display for virtual/augmented reality (VR/AR) with a truly immersive experience should at least have a 2-inch screen for accommodating a field of view (FoV) of 105°, and a pixel density of 2000 ppi for eliminating screen door effect. However, RGB side-by-side OLED displays that are currently used in most VR/AR headsets have pixel densities between 600 and 800 ppi due to the technical limitations of conventional fine metal masks (FMMs). On the other hand, white OLED micro-displays with a color conversion scheme are feasible to realize pixel densities exceeding 2000 ppi, but their panel size is typically limited to <1 inch by the CMOS backplanes, and the optical efficiency is greatly reduced by the color filter array. To address these issues, we have developed a process to produce a robust silicon nitride shadow mask (SiNM) for directly patterning ultra-high-resolution, RGB side-by-side OLED displays. So far, the ultra-flat self-tensioned SNMs with a max. diagonal size of 3 inch and a max. pixel density of 5000 ppi on 4-inch silicon wafers have been fabricated in high yield.

  • BEOL-Compatible Oxide Ferroelectric Field-Effect Transistors (FeFETs) for Computing In-Memory (CiM) Hardware

    • To be updated...


    Publications

  • Books & Book Chapters

    1. Zhang M, Deng S, Yan Y, Wong M, Kwok HS. “Chapter 2: Fundamentals of Metal-Oxide Thin-Film Transistors”, in Semiconducting metal oxide thin-film transistors, IOP Publishing, 2020. [Book]

  • Journal Papers

  • (*equal contribution, ^correponding author)

    1. Deng S*, Park TJ*, Yu H*, Saha A, Islam ANMN, Wang Q, Sengupta A, Ramanathan S. IEEE Electron Device Letters. 2023 Feb;44(10):1776-9.

    2. Deng S*, Yu H*, Park TJ*, Islam ANMN, Manna S, Pofelski A, Wang Q, Zhu Y, Sankaranarayanan SKRS, Sengupta A, Ramanathan S. Science Advances. 2023 Mar;9(11):eade483. [Paper]

    3. Park TJ*, Deng S*, Manna S, Islam ANMN, Yu H, Yuan Y, Fong D, Chubykin A, Sengupta A, Sankaranarayanan SKRS, Ramanathan S. Complex oxides for brain‐inspired computing: A review. Advanced Materials. 2022 Jun;2203352. [Paper]

    4. Deng S, Dong SC, Chen R, Zhong W, Li G, Zhang M, Yeung FS, Wong M, Kwok HS. A cost‐effective fluorination method for enhancing the performance of metal oxide thin‐film transistors. Journal of the Society for Information Display. 2021 May;29(5):318-27. [Paper] [Additional cover]

    5. Deng S, Zhong W, Dong S, Chen R, Li G, Zhang M, Yeung FS, Wong M, Kwok HS. Thermal Budget Reduction in Metal Oxide Thin-Film Transistors via Planarization Process. IEEE Electron Device Letters. 2021 Feb;42(2):180-3. [Paper]

    6. Yin X*, Deng S*, Li G, Zhong W, Chen R, Li G, Yeung FS, Wong M, Kwok HS. Low Leakage Current Vertical Thin-Film Transistors With InSnO-Stabilized ZnO Channel. IEEE Electron Device Letters. 2019 Dec;41(2):248-51. [Paper]

    7. Deng S, Chen R, Li G, Zhang M, Yeung FS, Wong M, Kwok HS. Gate Insulator engineering in top-gated indium-tin-oxide-stabilized ZnO thin-film transistors. IEEE Electron Device Letters. 2019 May;40(7):1104-7. [Paper]

    8. Xu Y*, Deng S*, Wu Z, Li B, Qin Y, Zhong W, Chen R, Li G, Wong M, Kwok HS. The implementation of fundamental digital circuits with ITO-stabilized ZnO TFTs for transparent electronics. IEEE Transactions on Electron Devices. 2018 Nov;65(12):5395-9. [Paper]

    9. Zhong W*, Deng S*, Wang K, Li G, Li G, Chen R, Kwok HS. Feasible route for a large area few-layer MoS2 with magnetron sputtering. Nanomaterials. 2018 Aug;8(8):590. [Paper]

    10. Deng S, Chen R, Li G, Zhang M, Xia Z, Wong M, Kwok HS. Threshold voltage adjustment in hybrid-microstructural ITO-stabilized ZnO TFTs via gate electrode engineering. IEEE Electron Device Letters. 2018 Jun;39(7):975-8. [Paper]

    11. Deng S, Chen R, Li G, Xia Z, Zhang M, Zhou W, Wong M, Kwok HS. Hybrid-Phase Microstructural ITO-Stabilized ZnO TFTs With Self-Aligned Coplanar Architecture. IEEE Electron Device Letters. 2017 Oct;38(12):1676-9. [Paper]

    12. Deng S, Chen R, Li G, Xia Z, Zhang M, Zhou W, Wong M, Kwok HS. Investigation of high-performance ITO-stabilized ZnO TFTs with hybrid-phase microstructural channels. IEEE Transactions on Electron Devices. 2017 Jun;64(8):3174-82. [Paper]

    13. Deng S, Chen R, Li G, Xia Z, Zhang M, Zhou W, Wong M, Kwok HS. High-performance staggered top-gate thin-film transistors with hybrid-phase microstructural ITO-stabilized ZnO channels. Applied Physics Letters. 2016 Oct;109(18):182105. [Paper]

    14. Deng S, Chen R, Zhou W, Ho JY, Wong M, Kwok HS. Fabrication of high-performance bridged-grain polycrystalline silicon TFTs by laser interference lithography. IEEE Transactions on Electron Devices. 2016 Feb;63(3):1085-90. [Paper]

    15. Li H, Deng S^, Xu Y, Zhong W, Luo D, Li G, Kwok HS, Chen R. A Differential Ring Oscillator with Tail Current Source Control Scheme Using N-Type Oxide TFTs. IEEE Transactions on Electron Devices. 2022 Mar;69(4):1870-5. [Paper]

    16. Xu Y, Wu Z, Li B, Deng S^, Zhong W, Li G, Luo D, Yeung FS, Kwok HS, Chen R. Oxide TFT Frontend Amplifiers for Flexible Sensing Systems. IEEE Transactions on Electron Devices. 2021 Dec;68(12):6190-6. [Paper]

    17. Xu Y, Zhong W, Li B, Deng S^, Fan H, Wu Z, Lu L, Yeung FS, Kwok HS, Chen R. An Integrator and Schmitt Trigger Based Voltage-to-Frequency Converter Using Unipolar Metal-Oxide Thin Film Transistors. IEEE Journal of the Electron Devices Society. 2020 Dec;9:144-50. [Paper]

    18. Fan H, Li G, Deng S^, Xu Y, Qin Y, Liu Y, Yeung SY, Wong M, Kwok HS, Chen R. A High Gain Low-Noise Amplifier Based on ITO-Stabilized ZnO Thin-Film Transistors. IEEE Transactions on Electron Devices. 2020 Oct;67(12):5537-43. [Paper]

    19. Xu Y, Li B, Deng S^, Qin Y, Fan H, Zhong W, Liu Y, Wu Z, Yeung FS, Wong M, Kwok HS. A novel envelope detector based on unipolar metal-oxide TFTs. IEEE Transactions on Circuits and Systems II: Express Briefs. 2020 Feb;67(11):2367-71. [Paper]

    20. Qin Y, Li G, Xu Y, Chen R, Deng S^, Zhong W, Wu Z, Li B, Li G, Yeung FS, Wong M. Low-power design for unipolar ITO-stabilized ZnO TFT RFID code generator using differential logic decoder. IEEE Transactions on Electron Devices. 2019 Oct;66(11):4768-73. [Paper]

    21. Pofelski A, Jia H, Deng S, Yu H, Park TJ, Manna S, Chan MKY, Sankaranarayanan SKRS, Ramanathan S, Zhu Y. Subnanometer Scale Mapping of Hydrogen Doping in Vanadium Dioxide. Nano Letters. (In press) [Paper]

    22. Chen Y, Liu Y, Deng S, Chen R, Zhang J, Kwok HS, Zhong W. Low-frequency noise in InSnZnO thin film transistors with high-quality SiO2 gate oxide stacks. Applied Physics Letters. 2016 Oct;124(2):023501. [Paper]

    23. Zhang M, Jiang Z, Deng S, Chen Z, Ma X, Tien CH, Chen LC, Wong M, Kwok HS. Hot Carrier Degradation Accompanied by Recovery in InSnZnO Thin-Film Transistors. IEEE Electron Device Letters. 2023 July; 44(7):1124-27. [Paper]

    24. Zhang J, Yao C, Liu X, Ding Z, Liu B, Deng S, Kwok HS, Li G. Controllable Transformation of 2D Perovskite for Multifunctional Sensing Properties. The Journal of Physical Chemistry C. 2023 Apr; 127(16):7730-39. [Paper]

    25. Chen Z, Zhang M, Deng S, Jiang Z, Yan Y, Han S, Zhou Y, Wong M, Kwok HS. Effect of Moisture Exchange Caused by Low-Temperature Annealing on Device Characteristics and Instability in InSnZnO Thin-Film Transistors. Advanced Materials Interfaces. 2022 May; 9(14):2102584. [Paper] [Inside back cover]

    26. Yan H, Huang J, Zhang X, Wang M, Liu J, Meng C, Deng S, Lu L, Xu P, Kwok HS, Li G. A buried functional layer for inorganic CsPb0.75Sn0.25I2Br perovskite solar cells. Solar RRL. 2022 Apr; 6(4):2100899. [Paper]

    27. Zhong W, Zhang J, Liu Y, Tan L, Lan L, Deng S, Yeung FS, Kwok HS, Chen R. Gate Dielectric Treated by Self-Assembled Monolayers (SAMs) to Enhance the Performance of InSnZnO Thin-Film Transistors. IEEE Transactions on Electron Devices. 2022 May; 69(5):2398-2403. [Paper]

    28. Shi W, Hu L, Liu Y, Deng S, Xu Y, Kwok HS, Chen R. Arithmetic and Logic Circuits Based on ITO-Stabilized ZnO TFT for Transparent Electronics. IEEE Transactions on Circuits and Systems I: Regular Papers. 2022 Jan;69(1):356-65. [Paper]

    29. Luo Z, Liu B, Luo X, Zheng T, Deng S, Chen R, Tian B, Xu P, Kwok HS, LI G. A Generic Protocol for Highly Reproducible Manufacturing of Efficient Perovskite Light-Emitting Diodes Using In-Situ Photoluminescence Monitoring. Advanced Materials Technologies. 2021 Oct;2100987. [Paper]

    30. Zhang J, Zhong W, Liu Y, Huang J, Deng S, Zhang M, Kwok HS, Li G. A High-Performance Photodetector Based on 1D Perovskite Radial Heterostructure. Advanced Optical Materials. 2020 Oct;2101504. [Paper]

    31. Luo X, Zheng T, Luo Z, Liu J, Deng S, Chen R, Zhang M, Kwok HS, Zhang J, LI G. Visual Electrocardiogram Synchronization Monitor Using Perovskite-Based Multicolor Light-Emitting Diodes. ACS Photonics. 2021 Sep;8(11):3337-45. [Paper]

    32. Zhong W, Kang L, Deng S, Lu L, Yao R, Lan L, Kwok HS, Chen R. Effect of Sc₂O₃ Passivation Layer on the Electrical Characteristics and Stability of InSnZnO Thin-Film Transistors. IEEE Transactions on Electron Devices. 2021 Aug;68(10):4956-61. [Paper]

    33. Yin X, Chen Y, Li G, Zhong W, Deng S, Lu L, Li G, Kwok HS, Chen R. Analysis of low frequency noise in in situ fluorine-doped ZnSnO thin-film transistors. AIP Advances. 2021 Apr;11(4):045326. [Paper]

    34. Xu Y, Li B, Zhong W, Deng S, Fan H, Wu Z, Yeung FS, Kwok HS, Chen R. A unipolar thin‐film transistor‐based amplifier with enhanced DC offset suppression. Electronics Letters. 2021 Jan;57(2):67-70. [Paper]

    35. Huang J, Yan H, Zhou D, Zhang J, Deng S, Xu P, Chen R, Kwok HS, Li G. Introducing Ion Migration and Light-Induced Secondary Ion Redistribution for Phase-Stable and High-Efficiency Inorganic Perovskite Solar Cells. ACS Applied Materials & Interfaces. 2020 Aug;12(36):40364-71. [Paper]

    36. Zhang M, Deng S, Zhou W, Yan Y, Wong M, Kwok HS. Reversely-Synchronized-Stress-Induced Degradation in Polycrystalline Silicon Thin-Film Transistors and Its Suppression by a Bridged-Grain Structure. IEEE Electron Device Letters. 2020 Jun;41(8):1213-6. [Paper]

    37. Liu Y, Huang YX, Deng S, Wong M, Kwok HS, Chen R. Dimension Scaling Effects on Conduction and Low Frequency Noise Characteristics of ITO-Stabilized ZnO Thin Film Transistors. IEEE Journal of the Electron Devices Society. 2020 Apr;8:435-41. [Paper]

    38. Zhang M, Lin H, Deng S, Chen R, Li G, Han ST, Zhou Y, Yan Y, Zhou W, Wong M, Kwok HS. High‐Performance Polycrystalline Silicon Thin‐Film Transistors without Source/Drain Doping by Utilizing Anisotropic Conductivity of Bridged‐Grain Lines. Advanced Electronic Materials. 2020 Feb;6(2):1900961. [Paper]

    39. Zhang J, Ren B, Deng S, Huang J, Jiang L, Zhou D, Zhang X, Zhang M, Chen R, Yeung F, Kwok HS. Voltage‐Dependent Multicolor Electroluminescent Device Based on Halide Perovskite and Chalcogenide Quantum‐Dots Emitters. Advanced Functional Materials. 2021 Dec;30(4):1907074. [Paper]

    40. Zhang M, Yan Y, Deng S, Zhou W, Yan Y, Wong M, Kwok HS. Degradation Induced by Forward Synchronized Stress in Poly-Si TFTs and Its Reduction by a Bridged-Grain Structure. IEEE Electron Device Letters. 2019 Jul;40(9):1467-70. [Paper]

    41. Weng S, Chen R, Zhong W, Deng S, Li G, Yeung FS, Lan L, Chen Z, Kwok HS. High-Performance Amorphous Zinc–Tin–Oxide Thin-Film Transistors With Low Tin Concentration. IEEE Journal of the Electron Devices Society. 2019 May;7:632-7. [Paper]

    42. Ren B, Yuen G, Deng S, Jiang L, Zhou D, Gu L, Xu P, Zhang M, Fan Z, Yueng FS, Chen R. Multifunctional optoelectronic device based on an asymmetric active layer structure. Advanced Functional Materials. 2019 Apr;29(17):1807894. [Paper] [Cover]

    43. Li G, Deng S, Zhang M, Chen R, Xu P, Wong M, Kwok HS. Achieving high open‐circuit voltage for p‐i‐n perovskite solar cells Via anode contact engineering. Solar Rrl. 2018 Oct;2(10):1800151. [Paper]

    44. Zhang M, Yan Y, Li G, Deng S, Zhou W, Chen R, Wong M, Kwok HS. OFF-state-stress-induced instability in switching polycrystalline silicon thin-film transistors and its improvement by a bridged-grain structure. IEEE Electron Device Letters. 2018 Sep;39(11):1684-7. [Paper]

    45. Chen R, Deng S, Liu Y, Liu Y, Li B, Wong M, Kwok HS. Investigation of top gate GaN thin-film transistor fabricated by DC magnetron sputtering. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 2018 May;36(3):032203. [Paper]

    46. Chen R, Zhou W, Deng S, Zhang M, Wong M, Kwok HS. Passivation of Poly-Si Thin Film Employing Si Self-Implantation and Its Application to TFTs. IEEE Journal of the Electron Devices Society. 2018 Jan;6:240-4. [Paper]

    47. Liu Y, Deng S, Chen R, Li B, En YF, Chen Y. Low-frequency noise in hybrid-phase-microstructure ITO-stabilized ZnO thin-film transistors. IEEE Electron Device Letters. 2017 Dec;39(2):200-3. [Paper]

    48. Li G, Jiang Y, Deng S, Tam A, Xu P, Wong M, Kwok HS. Overcoming the limitations of sputtered nickel oxide for high‐efficiency and large‐area perovskite solar cells. Advanced Science. 2017 Dec;4(12):1700463. [Paper]

    49. Xia Z, Lu L, Li J, Feng Z, Deng S, Wang S, Kwok HS, Wong M. Characteristics of elevated-metal metal-oxide thin-film transistors based on indium-tin-zinc oxide. IEEE Electron Device Letters. 2017 May;38(7):894-7. [Paper]

    50. Cao Y, Deng S, Hu Q, Zhong Q, Luo QP, Yuan L, Zhou J. Three-dimensional ZnO porous films for self-cleaning ultraviolet photodetectors. RSC advances. 2015 Oct;5(104):85969-73. [Paper]

  • Conference Papers

    1. Deng S, Kwak J, Lee J, Aabrar KA, Kim TH, Kirtania S, Choe G, Zhang C, Li W, Phadke O, Yu S, Datta S. BEOL Compatible Oxide Power Transistors for On-Chip Voltage Conversion in Heterogenous 3D (H3D) Integrated Circuits. In Proceedings of 2023 IEEE International Eletron Devices Meeting (IEDM), San Francisco, USA, 2023 Dec.

    2. Aabrar KA, Kirtania S, Deng S, Choe G, Khan A, Datta S. Improved Reliability and Enhanced Performance in BEOL Compatible W-doped In2O3 Dual-Gate Transistor. In Proceedings of 2023 IEEE International Eletron Devices Meeting (IEDM), San Francisco, USA, 2023 Dec.

    3. Pofelski A, Deng S, Yu H, Park TJ, Jia H, Manna S, Chan MKY, Sankaranarayanan SK RS, Ramanathan S, Zhu Y. Dopant Mapping of Partially Hydrogenated Vanadium Dioxide using the Energy Loss Near Edge Structure Technique. In Proceedings of 2023 Microscopy and Microanalysis, Minneapolis, USA, 2023 July (Vol. 29, Supplement 1, pp. 1667-68). [Paper]

    4. Dong SC, Yang J, Deng S, Tam BST, Yao J, Tang CW. 85‐1: Ultrahigh‐Resolution Corrugated Silicon Nitride Masks for Direct Patterning of OLED Microdisplays. In SID Symposium Digest of Technical Papers, Los Angeles, USA, 2023 June (Vol. 54, No. 1, pp. 1192-95). [Paper]

    5. Deng S, Zhong W, Chen R, Dong SC, Li G, Zhang M, Yeung FS, Wong M, Kwok HS. Fluorinated Metal Oxide Thin-Film Transistors with Low Process Thermal Budgets. In SID Symposium Digest of Technical Papers, Nanjing, China, 2023 Mar. (Invited)

    6. Yu H, Deng S, Park TJ, Wang Q, Mondal S, Ramanathan S. VO2 Insulator-Metal Phase Change Based Neuromorphic Materials and Devices. In Proceedings of 2022 MRS Fall Meeting & Exhibit, Boston, MA, USA, 2022 Nov.

    7. Dong SC, Deng S, Yang J, Jiang Y, Tang CW. 34.4: 3‐inch, 3000‐ppi Silicon Nitride Masks for Direct Patterning of OLED Microdisplays. In SID Symposium Digest of Technical Papers, Fuzhou, China, 2022 Oct. [Paper]

    8. Xu Y, Li B, Deng S, Zhong W, Yin X, Wu Z, Kwok HS, Chen R. P‐1.16: Frontend Amplifier with Unipolar Oxide TFTs for Heart Rate Measurements. In SID Symposium Digest of Technical Papers, Fuzhou, China, 2022 Oct. [Paper]

    9. Deng S, Park TJ, Wang Q, Yu H, Ramanathan S. Hydrogenated VO2 Switches for Neuromorphic Functions. In Proceedings of 23rd International Conference on Solid State Ionics (SSI-23), Boston, MA, USA, 2022 Jul.

    10. Deng S, Chen R, Xu Y, Zhong W, Dong SC, Li G, Zhang M, Yeung FS, Wong M, Kwok HS. All-Oxide Thin-Film Transistors for Low-Voltage-Operation Circuits. In SID Symposium Digest of Technical Papers, Beijing, China, 2021 Jun. [Paper]

    11. Deng S, Zhong W, Dong SC, Chen R, Li G, Zhang M, Yeung FS, Wong M, Kwok HS. A Cost-Effective Fluorination Method for Enhancing the Performance of Metal Oxide Thin-Film Transistors Using a Fluorinated Planarization Layer. In SID Symposium Digest of Technical Papers, virtual conference, 2021 May. (Distinguished Paper Award) [Paper] [Slides]

    12. Zhang M, Ma X, Jiang Z, Deng S, Li G, Chen R, Yan Y, Wong M, Kwok HS. Light-Illumination-Induced Degradation and Its Long-Term Recovery in Indium-Tin-Zinc Oxide Thin-Film Transistors. In Proceedings of 2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA), Hangzhou, China, 2019 Jul (pp. 1-3). [Paper]

    13. Ma X, Zhang M, Jiang Z, Deng S, Yan Y, Li G, Chen R, Wong M, Kwok HS. Output Breakdown Characteristics and the Related Degradation Behaviors in Metal Oxide Thin Film Transistors. In Proceedings of 2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA), Hangzhou, China, 2019 Jul (pp. 1-3). [Paper]

    14. Jiang Z, Zhang M, Ma X, Yan Y, Li G, Deng S, Zhou W, Chen R, Wong M, Kwok HS. Effect of Active Layer Thickness on Device Performance and Hot Carrier Instability in Metal Induced Crystallized Polycrystalline Silicon Thin-Film Transistors. In Proceedings of 2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA), Hangzhou, China, 2019 Jul (pp. 1-4). [Paper]

    15. Deng S, Chen R, Li G, Zhang M, Yeung FS, Wong M, Kwok HS. P‐16: Stacked PECVD SiO2 Gate Insulators for Top‐Gate Metal Oxide Thin‐Film Transistors in Enhancement Operation Mode. In SID Symposium Digest of Technical Papers, San Jose, USA, 2019 Jun (Vol. 50, No. 1, pp. 1271-1274). [Paper]

    16. Zhang M, Jiang Z, Deng S, Ma X, Yan Y, Li G, Chen R, Wong M, Kwok HS. P‐15: Gate‐Bias‐Stress‐Induced Instability in Hybrid‐Phase Microstructural ITO‐Stabilized ZnO TFTs. In SID Symposium Digest of Technical Papers, San Jose, USA, 2019 Jun (Vol. 50, No. 1, pp. 1267-1270). [Paper]

    17. Deng S, Chen R, Li G, Zhang M, Yeung FS, Wong M, Kwok HS. Gate Insulator Engineering in Top-Gated ITO-Stabilized ZnO TFTs. In Proceedings of 2018 Postgraduate Workshop on Display Research, Hong Kong, 2018 Dec (pp. 1-3). (Best Poster Presentation Award) [Paper]

    18. Zhang M, Yan Y, Zhou W, Chen R, Deng S, Wong M, Kwok HS. Degradation Behaviors of Driving Thin-Film Transistors in Active-Matrix Organic Light-Emitting Diode Displays. In Proceedings of 2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC), Shenzhen, China, 2018 Jun (pp. 1-3). [Paper]

    19. Zhang M, Yan Y, Zhou W, Chen R, Deng S, Wong M, Kwok HS. Yin X, Deng S, Li G, Zhong W, Chen R, Wong M, Kwok HS. Vertical Channel ITO-stabilized ZnO Thin-Film Transistors. In Proceedings of 2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC), Shenzhen, China, 2018 Jun (pp. 1-3). [Paper]

    20. Deng S, Chen R, Li G, Zhang M, Xia Z, Wong M, Kwok HS. P‐20: Towards High‐Performance and Cost‐Effective Top‐Gated Oxide TFTs with Hybrid‐Phase Microstructural Channels. In SID Symposium Digest of Technical Papers, Los Angeles, 2018 May (Vol. 49, No. 1, pp. 1252-1255). [Paper]

    21. Zhang M, Yan Y, Deng S, Zhou W, Chen R, Wong M, Kwok HS. P‐1.9: Characterization of Self‐Aligned Top‐Gate Microcrystalline Silicon Thin Film Transistors. In SID Symposium Digest of Technical Papers, Guangzhou, China, 2018 Apr (Vol. 49, pp. 544-546). [Paper]

    22. Zhong W, Li G, Deng S, Yin X, Lan L, Chen R, Kwok HS. P‐1.2: Photoluminescence and Electrical Properties study of ITO‐stabilized ZnO Thin‐Film Transistors with different annealing temperatures. In SID Symposium Digest of Technical Papers, Guangzhou, China, 2018 Apr (Vol. 49, pp. 520-523). [Paper]

    23. Xu Y, Wu Z, Deng S, Qin Y, Zhong W, Chen R, Li B, Wong M, Kwok HS. 30.1: Transparent Basic Logic Circuits with ITO‐Stabilized ZnO Thin Film Transistors. In SID Symposium Digest of Technical Papers, Guangzhou, China, 2018 Apr (Vol. 49, pp. 322-325). [Paper]

    24. Deng S, Chen R, Li G, Zhang M, Zhou Z, Xia Z, Wong M, Kwok HS. Back-Channel-Etched Oxide TFTs with Hybrid-Phase Microstructural ITO-Stabilized ZnO Channels. In Proceeding of 2018 International Conference on Display Technology (ICDT), Guangzhou, China, 2018 Apr (pp. 1-4). [Paper]

    25. Deng S, Chen R, Li G, Xia Z, Zhang M, Zhou W, Wong M, Kwok HS. A Study on Hybrid-Phase Microstructural ITO-Stabilized ZnO TFTs with Different Gate Insulators and Electrodes. In Proceedings of EuroDisplay 2017, Berlin, Germany, 2017 Nov.

    26. Zhong W, Li G, Chen R, Lan L, Zhang X, Pei W, Chen H, Deng S. A study on the bottom-gate ITO-stabilized ZnO thin-film transistors. In Proceedings of 2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC), Hsingchu, Taiwan, 2017 Oct (pp. 1-4). [Paper]

    27. Deng S, Chen R, Li G, Xia Z, Zhang M, Zhou W, Wong M, Kwok HS. Self-Aligned Hybrid-Phase Micro-Structural ITO-Stabilized ZnO TFTs Achieved via a Combination of PECVD Processes. In Proceedings of the International Display Manufacturing Conference (IDMC), Hsingchu, Taiwan, 2017 Sep (pp. 1-4). (Distinguished Poster Award) [Paper]

    28. Deng S, Chen R, Li G, Xia Z, Wang K, Zhang M, Zhou W, Wong M, Kwok HS. Achievement of High-Performance and Environmentally Stable TFTs by Introducing Hybrid-Phase Microstructure into InSnZnO Channels. In Proceeding of 23rd International Display Workshops in conjunction with Asia Display, Fukuoka, Japan, 2016 Dec (p. 260-263). [Paper]

    29. Deng S, Chen R, Li G, Xia Z, Zhang M, Zhou W, Wong M, Kwok HS. Hybrid-Phase Microstructure in ITO-stabilized ZnO Thin Films and Its Application to High-Performance Thin-film Transistors. In Proceedings of 2016 Postgraduate Workshop on Display Research, Guangzhou, China, 2016 Sep (pp. 1-3). (Best Oral Presentation Award) [Paper]

    30. Deng S, Chen R, Zhou W, Zhang M, Xia Z, Deng S, Wong M, Kwok HS. Fabrication of High-Performance Bridged-Grain Polycrystalline Silicon Thin-Film Transistors with Laser Interference Lithography Technology. In Proceedings of the International Display Manufacturing Conference and International Conference on 3D Systems & Application (IDMC&3DSA), Taipei, Taiwan, 2015 Aug (pp. 1-4). (Distinguished Paper Award) [Paper]

    31. Chen R, Zhou W, Deng S, Ho JY, Wong M, Kwok HS. Bridge-Grain Metal Induced Crystallization Poly-Si TFTs with Silicon Self-Implantation. In Proceedings of the International Display Manufacturing Conference and International Conference on 3D Systems & Application (IDMC&3DSA), Taipei, Taiwan, 2015 Aug (pp. 1-4). [Paper]

  • Patents

    1. Chen R, Deng S, Kwok H. Method for Manufacturing a Top-Gate Self-Aligned Indium-Tin-Zinc Oxide Thin-Film Transistor. United States Patent 11,049,881. 2021 Jun 29. [Patent]

    2. 陈荣盛, 邓孙斌, 郭海成. 一种自对准顶栅铟锡锌氧化物薄膜晶体管及其制造方法. Chinese patent ZL 2017 1 0792095.9. 2020 Oct 11. [Patent]

    3. 陈荣盛, 邓孙斌, 郭海成. 一种二硫化钼薄膜的制备方法. Chinese patent ZL 2019 1 0049361.8. 2020 Aug 28. [Patent]

    4. Chen R, Deng S, Kwok H. Inorganic Metallic Oxide Thin Film with Composite Crystal Form and Manufacturing Method Thereof. United States patent application US 16/758,678. 2020 Apr 23. [Patent]

    5. 陈荣盛, 尹雪梅, 李国元, 邓孙斌, 郭海成. 垂直结构的复合晶型金属氧化物薄膜晶体管及其制造方法. Chinese patent application 2019 1 0975945.8. 2019 Oct 15. [Patent]

    6. 陈荣盛, 钟伟, 邓孙斌, 尹雪梅, 郭海成. 一种金属氧化物薄膜晶体管及其钝化层的制备方法. Chinese patent application 2018 1 1405391.X. 2018 Nov 23. [Patent]

    Talks

    1. [03/2023] "Fluorinated Metal Oxide Thin-Film Transistors with Low Process Thermal Budgets" on 2023 International Conference on Display Technology (ICDT 2023).

    2. [06/2021] "Hybrid-Phase Metal Oxide Thin-Film Transistor Technology" on Young Leader Conference of ICDT 2021. [Slides]

    3. [05/2020] "Hybrid-Phase Metal Oxide Thin-Film Transistors and their Applications" on Shanghai University League's Forum for International Young Scholars. [Slides]

    Awards

    1. Best Theme Poster Award, the 1st Annual Review of the Center for Heterogeneous Integration of Micro Electronic Systems (CHIMES) [Award Certificate]

    2. Distinguished Paper Award, Society for Information Display's Display Week 2021 [Award Certificate]

    3. Student Travel Grant, Society for Information Display's Display Week 2019

    4. 2018-19 SENG Academic Award for Continuing PhD Students, School of Engineering, HKUST [Award Certificate]

    5. Best Poster Presentation Award, 2018 Postgraduate Workshop on Display Research [Award Certificate]

    6. Student Travel Grant, Society for Information Display's Display Week 2018

    7. Distinguished Poster Award, The International Display Manufacturing Conference 2017 [Award Certificate]

    8. Best Oral Presentation Award, 2016 Postgraduate Workshop on Display Research [Award Certificate]

    9. Distinguished Paper Award, The International Display Manufacturing Conference and International Conference on 3D Systems & Application 2015 [Award Certificate]

    10. 2014-20 Full Postgraduate Scholarship, HKUST

    11. 2014 Outstanding Graduate, HUST

    12. 2012-13 Merit Student, HUST

    13. 2012-13 Self-Improvement Scholarship, HUST

    14. 2012-13 Academic Merit Scholarship, HUST

    15. 2011-12 Undergraduate Scientific and Technological Innovation Activist, HUST

    Professional Activities

  • Professional Memberships

  • Referee for Journals

  • Teaching Assistant

  • Organized Conferences/Workshops

    • Copyright © Sunbin Deng
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